 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Si5517DU Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS N-Channel 20 RDS(on) () 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V ID (A)a 6 6 6 -6 -6 -6 Qg 6 nc FEATURES * Halogen-free * TrenchFET(R) Power MOSFETs * New Thermally Enhanced PowerPAK(R) ChipFET(R) Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT P-Channel - 20 5.5 nc PowerPAK ChipFET Dual 1 S1 G1 D1 APPLICATIONS * Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits 2 3 S2 G2 Marking Code EA 4 XXX Lot Traceability and Date Code Part # Code G2 G1 D1 S2 8 7 D1 D2 6 5 D2 Bottom View Ordering Information: Si5517DU-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS N-Channel 20 8 6a 6a 7.2b, c 5.8b, c 20 6.9 1.9b, c 8.3 5.3 2.3b, c 1.5b, c - 55 to 150 260 - 6a - 6a - 4.6b, c - 3.7b, c - 15 - 6.9 - 1.9b, c 8.3 5.3 2.3b, c 1.5b, c P-Channel - 20 Unit V Continuous Drain Current (TJ = 150 C) A Pulsed Drain Current Source-Drain Current Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e C THERMAL RESISTANCE RATINGS Unit t5s Maximum Junction-to-Ambientb, f C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 C/W for both channels. Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 1 Parameter Symbol RthJA RthJC N-Channel Typ. Max. 45 55 12 15 P-Channel Typ. Max. 45 55 12 15 Si5517DU Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 1 mA VGS = 0 V, ID = - 1 mA ID = 250 A ID = - 250 A ID = 250 A ID = - 250 A VDS = VGS, ID = 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 C VDS = - 20 V, VGS = 0 V, TJ = 55 C On-State Drain Currentb ID(on) VDS 5 V, VGS = 4.5 V VDS - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 4.4 A VGS = - 4.5 V, ID = - 3.3 A Drain-Source On-State Resistanceb RDS(on) VGS = 2.5 V, ID = 4.1 A VGS = - 2.5 V, ID = - 2.8 A VGS = 1.8 V, ID = 1.8 A VGS = - 1.8 V, ID = - 0.76 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 8 V, ID = 4.4 A Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 4.6 A N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.4 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg N-Ch N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch 520 455 100 105 60 65 10.5 9.1 6 5.5 0.91 0.75 0.7 1.5 1.9 8 16 14 9 8.5 nC pF gfs VDS = 10 V, ID = 4.4 A VDS = - 10 V, ID = - 3.3 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 - 15 0.032 0.060 0.037 0.083 0.0455 0.108 22 9 0.039 0.072 0.045 0.100 0.055 0.131 S 0.4 - 0.4 20 - 20 17 - 20 - 2.6 2.4 1 -1 100 - 100 1 -1 10 - 10 A A V nA mV/C V Symbol Test Conditions Min. Typ.a Max. Unit P-Ch P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 1.8 A N-Ch P-Ch f = 1 MHz N-Ch P-Ch www.vishay.com 2 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time a Symbol Test Conditions N-Ch N-Channel VDD = 10 V, RL = 2.8 ID 3.6 A, VGEN = 4.5 V, Rg = 1 P-Ch N-Ch P-Ch N-Ch Min. Typ.a 20 8 65 35 40 40 10 55 5 5 12 15 26 30 8 45 Max. 30 15 100 55 60 60 15 85 10 10 20 25 40 45 15 70 6.9 - 6.9 20 - 15 Unit td(on) tr td(off) tf td(on) tr td(off) tf P-Channel P-Ch VDD = - 10 V, RL = 2.7 ID - 3.7 A, VGEN = - 4.5 V, Rg = 1 N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 2.8 ID 3.6 A, VGEN = 8 V, Rg = 1 P-Channel VDD = - 10 V, RL = 2.7 ID - 3.7 A, VGEN = - 8 V, Rg = 1 P-Ch N-Ch P-Ch ns N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IS ISM VSD trr Qrr ta tb TC = 25 C A IS = 1.2 A, VGS = 0 V IS = - 1.0 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch 0.8 - 0.8 45 30 21 15 29 11 16 19 1.2 - 1.2 70 60 32 30 V ns nC N-Channel N-Ch IF = 1.2 A, dI/dt = 100 A/s, TJ = 25 C P-Ch P-Channel IF = - 1 A, dI/dt = 100 A/s, TJ = 25 C N-Ch P-Ch N-Ch P-Ch ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 3 Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 VGS = 2.5 V thru 5 V 16 I D - Drain Current (A) 10 VGS = 2.5 V VGS = 2 V ID - Drain Current (A) 8 12 VGS = 1.5 V 6 8 4 TC = 125 C 2 25 C - 55 C 4 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.08 0.07 R DS(on) - On-Resistance (m) 0.06 0.05 VGS = 2.5 V 0.04 0.03 0.02 0.01 0.00 0 4 8 12 16 20 0 0 Crss 4 VGS = 1.8 V VGS = 4.5 V 600 C - Capacitance (pF) 800 Transfer Characteristics Ciss 400 200 Coss 8 12 16 20 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 4.4 A VGS - Gate-to-Source Voltage (V) 1.4 VDS = 10 V R DS(on) - On-Resistance (Normalized) 6 1.6 VGS = 4.5 V ID = 4.4 A Capacitance 1.2 4 VDS = 16 V 2 1.0 0.8 0 0 3 6 9 12 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 20 TJ = 150 C 10 I S - Source Current (A) 25 C, unless otherwise noted RDS(on) - Drain-to-Source On-Resistance (m) 0.08 ID = 4.4 A 0.07 0.06 125 C 0.05 25 C 0.04 TJ = 25 C 1 0.0 0.03 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.9 0.8 0.7 VGS(th) (V) 0.6 0.5 0.4 0.3 0.2 - 50 ID = 250 A Power (W) 30 40 On-Resistance vs. Gate-to-Source Voltage 20 10 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 600 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 10 ID(on) limited IDM limited Single Pulse Power, Junction-to-Ambient 100 s I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 0.1 TA = 25 C Single Pulse BVDSS limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified 10 s DC Safe Operating Area, Junction-to-Ambient Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 5 Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 15 10 12 I D - Drain Current (A) Power Dissipation (W) 8 9 Package Limited 6 6 4 3 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = R thJA = 87 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 7 Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 15 VGS = 5 V 4.5 V 12 I D - Drain Current (A) 4V 3.5 V 2V 3V 4 I D - Drain Current (A) 2.5 V 5 9 3 6 1.5 V 3 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 TC = 125 C 1 TC = 25 C 0 0.0 TC = - 55 C 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.30 VGS = 1.8 V R DS(on) - On-Resistance () 0.25 600 C - Capacitance (pF) 0.20 VGS = 2.5 V 0.15 800 Transfer Characteristics Ciss 400 200 0.10 VGS = 4.5 V 0.05 0 3 6 9 12 15 Crss 0 0 4 8 12 16 20 Coss I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 4.6 A VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Normalized) 6 VDS = 10 V 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 0 3 6 9 12 0.7 - 50 VGS = 4.5 V I D = 3.3 A Capacitance 4 VDS = 16 V 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature ( C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 10 R DS(on) - Drain-to-Source On-Resistance () 25 C, unless otherwise noted 0.20 I D = 4.6 A 0.16 I S - Source Current (A) TJ = 150 C TJ = 25 C 0.12 TA = 125 C 0.08 TA = 25 C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0.04 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.8 40 On-Resistance vs. Gate-to-Source Voltage 0.7 I D = 250 A 30 VGS(th) (V) 0.6 Power (W) 20 0.5 10 0.4 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 600 TJ - Temperature (C) Threshold Voltage 100 IDM limited Limited by R DS(on)* 10 I D - Drain Current (A) ID(on) limited Single Pulse Power, Junction-to-Ambient 1 1 ms 10 ms 100 ms 1s 10 s DC BVDSS limited 0.1 TA = 25 C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 9 Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 10 8 ID - Drain Current (A) Package Limited 6 Power Dissipation (W) 8 6 4 4 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = R thJA = 87 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73529. Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SI5517DU08
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |